site stats

Transistor mje 13007

WebMJE13007 onsemi Bipolar Transistors - BJT 8A 400V 80W NPN datasheet, inventory & pricing. Skip to Main Content. 080 42650000. Contact Mouser (Bangalore) 080 … WebMJE 13007: Leaded Power Transistor General Purpose: Central Semiconductor: 15: MJE 13007: 80.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 5 - 30 hFE. Continental Device India Limited: 16: MJE 13007: Switching Transistor: Korea Electronics (KEC) 17: MJE 13007:

MJE13007 onsemi Discrete Semiconductor Products DigiKey

WebMJE13007 Transistor, MJE13007 NPN High Voltage Switching Power Transistor, buy MJE13007 Transistor. WebSilicon Power Transistor These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features hyundai matthews syracuse https://streetteamsusa.com

13007 Pinout, Equivalent, Features, Applications - Components Info

WebFeb 13, 2024 · MJE13007 onsemi Bipolar Transistors - BJT 8A 400V 80W NPN datasheet, inventory, & pricing. Skip to Main Content (800) 346-6873. Contact Mouser (USA) (800) … WebMJE 13007 POWER TRANSISTOR CDIL Features Collector–Emitter Sustaining Voltage : 400 V. Collector–Emitter Breakdown Voltage : 700 V. Emitter–Base Voltage : 9.0 V. … molly laxen

mje13007 Single Bipolar Junction Transistors - BJT Farnell UK

Category:MJE13007 - MJE13007 NPN High Voltage High Speed Transistor …

Tags:Transistor mje 13007

Transistor mje 13007

Transistor morocco mje13007 datasheet & application notes

WebMJE13007G – Bipolar (BJT) Transistor NPN 400 V 8 A 14MHz 80 W Through Hole TO-220 from onsemi. ... MJE13007: Environmental Information: onsemi RoHS. Material Declaration MJE13007G. onsemi REACH. PCN Design/Specification: TO-220 Case Outline Update 18/Sep/2014: PCN Assembly/Origin: Web10pcs MOS Tube STP60NF06 60A 60V TO-220 In line Crystal Tube MOSFET di Tokopedia ∙ Promo Pengguna Baru ∙ Cicilan 0% ∙ Kurir Instan.

Transistor mje 13007

Did you know?

WebSILICON NPN SWITCHING TRANSISTOR, MJE13009 Datasheet, MJE13009 circuit, MJE13009 data sheet : STMICROELECTRONICS, alldatasheet, ... MJE13007: 91Kb / 2P: SILICON NPN SWITCHING TRANSISTOR Zowie Technology Corpor... MMBT4401: 125Kb / 6P: SWITCHING TRANSISTOR NPN SILICON Microsemi Corporation: JAN2N3737: WebMJE13007 Product details. POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS. The MJE/MJF13007 is designed for high–voltage, high–speed power switching …

WebThe 13007 transistor or also called MJE13007 is a TO-220 package high voltage BJT transistor. This transistor is mainly designed for high voltage and high speed applications but it can also be used for amplification purposes. The transistor is capable to drive a load of upto 400V with the max load current of upto 8A. WebMJE13007: 8.0 A, 400 V NPN Bipolar Power Transistor. The MJE/MJF13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It …

WebHow does MJE13007 work? MJE13007 is an NPN bipolar junction transistor that is a semiconductor device made of silicon material. The collector-base voltage is 700V while … WebApr 15, 2024 · The first test device is made with MJE13007 type transistors. These are NPN Bipolar Power Transistors which are designed for Switching Power Supply Applications. For the consumer, I used an LED lamp with a power of 8 and 10 watts.

WebMar 3, 2024 · MJE5850G. MJE5850G. Bipolar Transistors - BJT 8A 300V 80W PNP. QuickView. Stock: 79. 79. Popular Searches: 60 V 40 V 300 mV 6 V 300 MHz 200 mA SMD/SMT SOT-23-3 NPN Bipolar Transistors - BJT. Technical Specifications.

WebFeb 13, 2024 · MJE13007 onsemi Bipolar Transistors - BJT 8A 400V 80W NPN datasheet, inventory, & pricing. Skip to Main Content (800) 346-6873. Contact Mouser (USA) (800) 346-6873 Feedback. Change Location. English. Español $ USD United States. Please confirm your currency selection: hyundai matteson serviceWebOrder today, ships today. MJE13007 – Bipolar (BJT) Transistor NPN 400 V 8 A 14MHz 80 W Through Hole TO-220 from NTE Electronics, Inc. Pricing and Availability on millions of … molly laying on bottom of tankWebDec 22, 2024 · MJE13007 STMicroelectronics Bipolar Transistors - BJT IGBT & Power Bipolar datasheet, inventory, & pricing. Skip to Main Content (800) 346-6873. Contact … hyundai mass air flow sensorWebMar 14, 2024 · APT13005D, MJE13007 . How To Use MJE13001. The MJE13001 is an NPN bipolar transistor featuring a high breakdown voltage of 600V between the collector and emitter and a medium emitter current of 200mA. The high breakdown voltage and current-carrying capability make it particularly suited for low-power SMPS and lamp ballasts. molly laydenWebFeb 18, 2024 · MJE13007 is an NPN bipolar junction transistor mainly used for high voltage high-speed switching applications. Three layers are used for the construction of this … hyundai matthews ncWebmotorola transistor part # mje13007 national stock # 5961-01-127-8398 condition is new surplus 1988 + date codespaypal for payments onlywe sell and ship to the continental usa only if you intend to export this item you are responsible for all export rules and regulations domestic and foreign. check availability molly laybournWebNPN Bipolar Power Transistor For Switching Power Supply Applications, MJE13007 Datasheet, MJE13007 circuit, MJE13007 data sheet : ONSEMI, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. molly laymon